Vol. 2 Issue 2
Year: 2014
Issue:Mar-May
Title:An improved DC Characteristics of Quantum Dot Transistor under Illumination
Author Name:V. Vijayakumar and R. Seshasayanan
Synopsis:
The DC performance of the Quantum Dot Transistor under illumination is studied and presented in this paper. A device structure consisting of Quantum Dots(QD) in the GaAs layer is considered for illumination. The photoconductive effect in the GaAs and QD layer which increases the 2DEG Channel electron concentration is considered. The I-V Characteristics of Quantum Dot Transistor, under dark and illumination condition have been calculated, plotted and discussed. The Transfer Characteristics of Quantum Dot Transistor without and with illumination, Optical Response of Quantum Dot Transistor, and sheet concentration of the device is also calculated, plotted and discussed.
Year: 2014
Issue:Mar-May
Title:An improved DC Characteristics of Quantum Dot Transistor under Illumination
Author Name:V. Vijayakumar and R. Seshasayanan
Synopsis:
The DC performance of the Quantum Dot Transistor under illumination is studied and presented in this paper. A device structure consisting of Quantum Dots(QD) in the GaAs layer is considered for illumination. The photoconductive effect in the GaAs and QD layer which increases the 2DEG Channel electron concentration is considered. The I-V Characteristics of Quantum Dot Transistor, under dark and illumination condition have been calculated, plotted and discussed. The Transfer Characteristics of Quantum Dot Transistor without and with illumination, Optical Response of Quantum Dot Transistor, and sheet concentration of the device is also calculated, plotted and discussed.
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